NTE56051 & NTE56052 TRIAC, 8A Low Logic Level
Description: The NTE56051 and NTE56052 are glass passivated, Low Logic Level TRIACs in a TO220 type package designed for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits, and other low power gate trigger circuits. Absolute Maximum Ratings: Repetitive Peak Off-Sate Voltage (Note 1), VDRM NTE56051 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56052 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (Full Sine Wave, TMB 102C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Non-Repetitive Peak On-State Current, ITSM (Full Sine Wave, TJ = +125C prior to Surge, with Reapplied VDRMmax) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A2sec Repetitive Rate-of-Rise of On-State Current after Triggering, dIT/dt (ITM = 12A, IG = 0.2A, dIG/dt = 0.2A/s) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (+), G (-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (-), G (-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (-), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/s Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Mounting Base, RthJMB Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0K/W Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4K/W Typical Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Note 1. Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on-State. The rate-of-rise of current should not exceed 6A/s.
Electrical Characteristics: (TJ = +25C unless otherwise specfied)
Parameter Static Characteristics Gate Trigger Current MT2 (+), G (+) MT2 (+), G (-) MT2 (-), G (-) MT2 (-), G (+) Latching Current MT2 (+), G (+) MT2 (+), G (-) MT2 (-), G (-) MT2 (-), G (+) Holding Current On-State Voltage Gate Trigger Voltage IH VT VGT ID dVD/dt tgt VD = 12V, IT = 0.1A IT = 5A VD = 12V, IT = 0.1A VD = 400V, IT = 0.1A, TJ = +125C Off-State Leakage Current Dynamic Characteristics Critical Rate-of-Rise of Off-State Voltage Gate Controlled Turn-On Time VDM = 67% VDRMmax, TJ = +125C, Exponential Waveform, RGK = 1k ITM = 12A, VD = VDRMmax, IG = 0.1A, dIG/dt = 5A/s .420 (10.67) Max .110 (2.79) MT2 .147 (3.75) Dia Max .500 (12.7) Max - - 5 2 - - V/s s VD = VDRMmax, TJ = +125C IL VD = 12V, IT = 0.1A IGT VD = 12V, IT = 0.1A - - - - - - - - - - - 0.25 - 2.5 3.5 3.5 6.5 1.6 8.5 1.2 2.5 1.5 1.4 0.7 0.4 0.1 5 5 5 10 15 20 15 20 10 1.7 1.5 - 0.5 mA mA mA mA mA mA mA mA mA V V V mA Symbol Test Conditions Min Typ Max Unit
.250 (6.35) Max .500 (12.7) Min
.070 (1.78) Max MT1 .100 (2.54)
Gate MT2
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